Advanced Electronics Technology
Dr. David C. Shaver - Biography
Dr. David C. Shaver is Head of the Solid State Division at MIT Lincoln Laboratory. He oversees research in high-performance imaging sensors, deeply scaled silicon microelectronics, solid-state lasers, optoelectronics, superconductive devices, and biological sensors.
Dr. Shaver began working at the Laboratory in 1977 in the area of submicrometer structure fabrication. He applied X-ray and e-beam lithography to the fabrication of both electronic devices, such as submicrometer channel-length silicon MOSFETs, and diffractive optics, including Fresnel zone-plates used for X-ray imaging. As an outgrowth of his work in electron-beam lithography, he developed electron-beam techniques for testing and repairing wafer-scale integrated circuits. In 1984, he became chief scientist and subsequently director of research at Micrion Corporation, responsible for developing focused ion-beam and laser-beam microchemistry systems for photomask, microcircuit, and flat-panel display repair and modification. In 1988, he returned to Lincoln Laboratory and served as Assistant Leader of the Submicrometer Technology Group from 1988 to 1989 and Leader during 1989–1991. He led a group that pioneered the development of 193 nm wavelength optical lithography, which the semiconductor industry has now chosen as its manufacturing technology for integrated circuits at feature sizes of 90 nm and below. In 1991, he became the Director of the Microelectronics Laboratory and Assistant Head of the Solid State Division. He was responsible for completing, equipping, and bringing online this new class-10 microelectronics research facility and for overseeing programs in silicon microelectronics and microfabrication technology.
Dr. Shaver has participated in many government, industry, and academia workshops and studies aimed at identifying and fostering critical new technologies. He has been a member of the Semiconductor Industry Association’s Lithography Technology Working Group as well as a participant in the Department of Defense’s Advisory Group on Electron Devices. He was elected Fellow of the IEEE in 2008. He holds SB, SM, and PhD degrees in electrical engineering from the Massachusetts Institute of Technology.
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